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Product Data Sheet
January 10, 2005
6 - 18 GHz High Power Amplifier
* * * * * * * *
TGA9092-SCC
Dual Channel Power Amplifier 0.25um pHEMT Technology 6-18 GHz Frequency Range 2.8 W/Channel Midband Pout 5.6 W Pout Combined 24 dB Nominal Gain Balanced In/Out for Low VSWR 8V @ 1.2A per Channel Bias
Key Features and Performance
Primary Applications
* * X-Ku band High Power VSAT
36
Chip Dimensions 5.739 mm x 4.318 mm x 0.1016 mm
Pout @ P2dB (dBm)
35 34 33 32 31 30 29 28 6 7 8 9 10 11 12 13 14 15 16 17 18 Frequency (GHz)
Product Description The TriQuint TGA9092-SCC is a dual channel, threestage wide band HPA MMIC designed using TriQuint's proven 0.25 m Power pHEMT process to support a variety of high performance applications including military EW programs, VSAT, and other applications requiring wideband high power performance. Each amplifier channel consists of one 1200 m input device driving a 2400 m intermediate stage which drives a 4800 um output stage. The TGA9092-SCC provides a nominal 34 dBm of output power at 2dB gain compression across the 6-18 GHz range per channel . Power combined, nominal output power of 36.5 dBm can be expected with low loss external couplers. Typical per channel small signal gain is 24 dB. Typical single-ended Input/Output RL is 6-8 dB across the band. The TGA9092-SCC is 100% DC and RF tested onwafer to ensure performance compliance. The device is available in chip form.
Typical Measured Pout (RF Probe)
27 26 25 24 23 Gain (dB) 22 21 20 19 18 17 16 15 6 7 8 9 10 11 12 13 14 15 16 17 18 Frequency (GHz)
Typical Measured Small Signal Gain
1
TriQuint Semiconductor Texas: Phone (972)994 8465
Fax (972)994 8504 Web: www.triquint.com/mmw
Product Data Sheet
January 10, 2005
TGA9092-SCC
TABLE I MAXIMUM RATINGS Symbol V I
+ -
Parameter 5/ Positive Supply Voltage Negative Supply Voltage Range Positive Supply Current (Quiescent) Gate Supply Current Input Continuous Wave Power Power Dissipation Operating Channel Temperature Mounting Temperature (30 Seconds) Storage Temperature
Value 9V -5V TO 0V 3.5 A 84.48 mA 26 dBm 28.8 W 150 0C 320 C -65 to 150 0C
0
Notes 4/ 4/ 4/ 3/ 4/ 1/ 2/
V
+
| IG | PIN PD TCH TM TSTG 1/ 2/
These ratings apply to each individual FET. Junction operating temperature will directly affect the device median time to failure (T M). For maximum life, it is recommended that junction temperatures be maintained at the lowest possible levels. When operated at this bias condition with a base plate temperature of 70 0C, the median life is reduced from 1.6 E+6 to 5.4 E+4 hours. Combinations of supply voltage, supply current, input power, and output power shall not exceed PD. These ratings represent the maximum operable values for this two-channel device.
3/ 4/ 5/
TriQuint Semiconductor Texas: Phone (972)994 8465
Fax (972)994 8504 Web: www.triquint.com/mmw
2
Product Data Sheet
January 10, 2005
TGA9092-SCC
TABLE II DC PROBE TEST (TA = 25 C 5 C) Symbol Imax(Q1) Gm (Q1) VP BVGS BVGD Parameter Maximum Current Transconductance Pinch-off Voltage Breakdown Voltage GateSource Breakdown Voltage GateDrain Minimum 400 200 -1.5 -30 -30 Maximum 800 600 -0.5 -13 -13 Unit mA mS V V V
TABLE III AUTOPROBE FET PARAMETER MEASUREMENT CONDITONS
FET Parameters G m : Transconductance;
(I
DSS
- IDS 1 VG1
)
Test Conditions
For all material types, V DS is swept between 0.5 V and VDSP in search of the maximum value of Ids. This maximum IDS is recorded as IDS1. For Intermediate and Power material, IDS1 is measured at V GS = VG1 = -0.5 V. For Low Noise, HFET and pHEMT material, V GS = VG1 = -0.25 V. For LNBECOLC, use V GS = VG1 = -0.10 V. V DS fixed at 2.0 V, V GS is swept to bring IDS to 0.5 mA/mm. Drain fixed at ground, source not connected (floating), 1.0 mA/mm forced into gate, gate-to-drain voltage (V GD ) measured is V BDGD and recorded as BVGD; this cannot be measured if there are other DC connections between gate-drain, gate-source or drain-source. Source fixed at ground, drain not connected (floating), 1.0 mA/mm forced into gate, gate-tosource voltage (V GS) measured is V BDGS and recorded as BVGS; this cannot be measured if there are other DC connections between gate-drain, gate-source or drain-source. Positive voltage is applied to the gate to saturate the device. V DS is stepped between 0.5 V up to a maximum of 3.5 V, searching for the maximum value of I DS.
V P : Pinch-Off Voltage; V GS for I DS = 0.5 mA/mm of gate width. V BVGD : Breakdown Voltage, Gate-to-Drain; gate-todrain breakdown current (I BD ) = 1.0 mA/mm of gate width.
V BVGS : Breakdown Voltage, Gate-to-Source; gate-tosource breakdown current (I BS) = 1.0 mA/mm of gate width.
I MAX : Maximum I DS.
TriQuint Semiconductor Texas: Phone (972)994 8465
Fax (972)994 8504 Web: www.triquint.com/mmw
3
Product Data Sheet
January 10, 2005
TGA9092-SCC
TABLE IV RF WAFER CHARACTERIZATION TEST* (TA = 25C + 5C) (Vd = 8V, Id = 1.2A 5%)
Parameter
Test Condition
Limit Min Nom Max 20 24 18
6 8
Units
Small-signal Power Gain
Input Return Loss Output Return Loss
F = 6 to 17 GHz F = 18 GHz F = 6 to 18 GHz F = 6 to 18 GHz F = 6 to 8 GHz F = 9 to 18 GHz F = 6 to 18 GHz
dB
dB dB
Output Power @ 2dB gain compression Power Added Efficiency
32 32.5 12
34.5
-
dBm
25
%
Note: RF probe data taken at 1 GHz steps * This information is based on the per-channel device.
TABLE V THERMAL INFORMATION* Parameter RJC Thermal Resistance (channel to backside of carrier) Test Conditions Vd = 8 V ID = 2.4 A Pdiss = 19.2 W TCH (oC) 144.56 RJC (C/W) 3.88 TM (HRS) 1.6 E+6
Note: Assumes eutectic attach using 1.5 mil 80/20 AuSn mounted to a 20 mil CuMo Carrier at 70C baseplate temperature. Worst case condition with no RF applied, 100% of DC power is dissipated. * This information is a result of a thermal model analysis based on the entire two-channel device.
TriQuint Semiconductor Texas: Phone (972)994 8465
Fax (972)994 8504 Web: www.triquint.com/mmw
4
Product Data Sheet
January 10, 2005
TGA9092-SCC
Data Based on the 50th Percentile On-Wafer RF Probe Test Results, Sample Size = 3370 Devices
Bias Conditions: Vd = 8 V, Id = 1.2 A
36 35 34
Pout @ P2dB (dBm)
33 32 31 30 29 28 6 7 8 9 10 11 12 13 14 15 16 17 18 Frequency (GHz)
40 35 30 25
PAE (%)
20 15 10 5 0 6 7 8 9 10 11 12 13 14 15 16 17 18 Frequency (GHz)
TriQuint Semiconductor Texas: Phone (972)994 8465
Fax (972)994 8504 Web: www.triquint.com/mmw
5
Product Data Sheet
January 10, 2005
TGA9092-SCC
Data Based on the 50th Percentile On-Wafer RF Probe Test Results, Sample Size = 3370 Devices
Bias Conditions: Vd = 8 V, Id = 1.2 A
0 -2 -4 Input Return Loss (dB) -6 -8 -10 -12 -14 -16 -18 -20 -22 6 7 8 9 10 11 12 13 14 15 16 17 18 Frequency (GHz)
0 -2 -4 Output Return Loss (dB) -6 -8 -10 -12 -14 -16 -18 -20 -22 6 7 8 9 10 11 12 13 14 15 16 17 18 Frequency (GHz)
TriQuint Semiconductor Texas: Phone (972)994 8465
Fax (972)994 8504 Web: www.triquint.com/mmw
6
Product Data Sheet
January 10, 2005
TGA9092-SCC
Data Based on the 50th Percentile On-Wafer RF Probe Test Results, Sample Size = 3370 Devices
Bias Conditions: Vd = 8 V, Id = 1.2 A
27 26 25 24 23 Gain (dB) 22 21 20 19 18 17 16 15 6 7 8 9 10 11 12 13 14 15 16 17 18 Frequency (GHz)
TriQuint Semiconductor Texas: Phone (972)994 8465
Fax (972)994 8504 Web: www.triquint.com/mmw
7
Product Data Sheet
January 10, 2005
Mechanical Drawing
TGA9092-SCC
TriQuint Semiconductor Texas: Phone (972)994 8465
Fax (972)994 8504 Web: www.triquint.com/mmw
8
Product Data Sheet
January 10, 2005
Chip Assembly and Bonding Diagram
TGA9092-SCC
Note: All Vd's may be connected external to the MMIC.
GaAs MMIC devices are susceptible to damage from Electrostatic Discharge. Proper precautions should be observed during handling, assembly and test.
TriQuint Semiconductor Texas: Phone (972)994 8465
Fax (972)994 8504 Web: www.triquint.com/mmw
9
Product Data Sheet
January 10, 2005
TGA9092-SCC
Assembly Process Notes
Reflow process assembly notes: * * * * * Use AuSn (80/20) solder with limited exposure to temperatures at or above 300C. An alloy station or conveyor furnace with reducing atmosphere should be used. No fluxes should be utilized. Coefficient of thermal expansion matching is critical for long-term reliability. Devices must be stored in a dry nitrogen atmosphere.
Component placement and adhesive attachment assembly notes: * * * * * * * Vacuum pencils and/or vacuum collets are the preferred method of pick up. Air bridges must be avoided during placement. The force impact is critical during auto placement. Organic attachment can be used in low-power applications. Curing should be done in a convection oven; proper exhaust is a safety concern. Microwave or radiant curing should not be used because of differential heating. Coefficient of thermal expansion matching is critical.
Interconnect process assembly notes: * * * * * Thermosonic ball bonding is the preferred interconnect technique. Force, time, and ultrasonics are critical parameters. Aluminum wire should not be used. Discrete FET devices with small pad sizes should be bonded with 0.0007-inch wire. Maximum stage temperature is 200C.
GaAs MMIC devices are susceptible to damage from Electrostatic Discharge. Proper precautions should be observed during handling, assembly and test.
TriQuint Semiconductor Texas: Phone (972)994 8465
Fax (972)994 8504 Web: www.triquint.com/mmw
10

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